An illustration of the Migration Enhance Encapsulated Growth (MEEG) process to stabilize novel wide-bandgap two-dimensional nitride semiconductors that are not naturally occurring. MEEG is facilitated by defects in the graphene lattice that act as pathways for intercalation. When the gallium and nitrogen atoms meet at the graphene/SiC interface, they chemically react to form two-dimensional gallium nitride.
Image: Z. Al Balushi and Stephen Weitzner / Penn State MatSE
Zakaria Al Balushi, a doctoral candidate in materials science and engineering, was awarded the Materials Research Society (MRS) Gold Graduate Student Award for a presentation on his research on two-dimensional materials.